STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 description STN4130 is used trench technology to provide excell ent rds(on) and gate charge. those devices are ideal for boost converters and sy nchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. pin configuration (d-pak) to-252 to-251 part marking y: year code a: date code q:process code feature 60v/20.0a, r ds(on) = 40m? (typ.) @v gs = 10v 60v/20.0a, r ds(on) = 50m? @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability to-252,to-251 package design
STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage vdss 60 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 20.0 10.0 a pulsed drain current idm 34 a continuous source current (diode conduction) is 36 a power dissipation ta=25 ta=70 pd 42 25 w operation junction temperature tj 155 storgae temperature range tstg -55/155 thermal resistance-junction to ambient rja 13 /w
STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,id=250ma 60 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1 2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =60v,v gs =0v 1 zero gate voltage drain current i dss v ds =48v,v gs =0v t j =55 5 ua drain-source on- resistance r ds(on) v gs =10v,i d =20a v gs =4.5v,i d =20a 40 50 47 58 m? forward transconductance gfs v ds =5v,i d =20a 50 s diode forward voltage v sd i s =1.0a,v gs =0v 0.78 1.0 v dynamic total gate charge q g 34 gate-source charge q gs 16 gate-drain charge q gd v ds =10v,v ds =30v i d 20a 5.4 nc input capacitance c iss 1600 output capacitance c oss 100 reverse transfercapacitance c rss v ds =30v,v gs =0v f=1mhz 68 pf 7.5 turn-on time t d(on) tr 6.5 33 turn-off time t d(off) tf v ds =30v, v gs =10v r l = 1.5? i d =5.0a,v gen =3? 7.5 ns
STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 typical characterictics
STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 typical characterictics
STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 typical characterictics
STN4130 n channel enhancement mode mosfe t 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN4130 2009. v1 to-252-2l package outline sop-8p
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